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 Profiling As sputtering proceeds, we are able to monitor up to 10 different elements in a single run. The raw result is secondary ions signals versus time. Our job is to convert these signals into concentrations versus depth. Concentrations are deduced from standards, analysed in the same conditions. Depth calibration is obtained from crater depth measurement, plus sputtering relative speed of various materials, in case of a multilayered structure. Here is a typical profile, displaying a III-V multilayer.  Click here for this profile full page
The main parameters in profiling are :
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