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 Depth Resolution The rastered primary ion beam sputters a flat square crater, the size of which can be ajusted between 25x25 and 500x500 µm2. Only the ions from a circular region at the center of this crater are collected ; thus insuring a good depth resolution.  The ultimate depth resolution is limited by the mixing induced by the incident ions energy loss. It can thus be reduced by energy decrease, at the expense of sputtering rate and crater shape. Our job is to define the right set of parameters for each problem. EXAMPLE The next profile was obtained on a monolithic AlGaInAs/AlInAs structure for Vertical Emitting Laser. It shows that good depth resolution can be obtained over depths exceeding 20 microns.  Click here for this profile full pageThe next profile shows a Si-Ge superlattice. Such profile takes low primary beam energy, to minimize mixing effect, which ultimately limits depth resolution.  Click here for this profile full pageThe ULTRA SHALLOW junction challenge: Very low energy B implantation in silicon takes very special care in SIMS profiling. At Probion, we have developed low energy impact analytical conditions to overcome that challenge.  Click here for this profile full page
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