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Time Resolved Photoluminescence

In Time Resolved Photoluminescence, the sample is excited by a picosecond pulsed laser whose photon energy is higher than the semiconductor bandgap. The created electrons and holes recombine and luminesce during all their life time. The luminescence decay gives thus the excess carrier life time.

This life time is crucial for some semiconductor devices properties :
  • Threshold current of laser diode
  • Gain of bipolar transistors
  • Efficiency of photoelectric converter
The limits of our apparatus are :
  • TRPL range : between 2 ps and 200 ns
  • Semiconductor band-gap :between 0.36 and 1.65 micron
  • Direct band-gap





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