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The above figure compares the luminescence decay of a 1.55 mm MQW InGaAsP laser active layer for two different InP regrowth conditions. The laser is a DFB Gain Coupled laser with a RIBE etched grating in the active layer. The quality of the active layer is very dependent on the InP regrowth conditions : In the case of standard regrowth, there were dislocations going through the active layer and the laser was not working. In the case of optimized regrowth, there were no dislocations and the threshold current was 10 mA. |
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