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 Students and researchers in materials sciences are led to carry out or make carry out analysis that can sometimes involve heavy equipments and a thorough specialization. A perfect command of these techniques is essential to extract a maximum of profit from them. The goal of this tutorial is to bring a particular lighting to one of the most powerful analysis technique, particularly used in the field of semiconductors: the Secondary Ion Mass Spectrometry or "SIMS" technique. Epitaxy techniques make it possible to produce heterostructures containing extremely varied alloys of semiconductors and associated materials: in the silicon domain: Si, SiGe, SiO2, SiN; in the III-V semiconductors domain: GaAs, AlGaAs, InP, InGaAs, GaInP, InGaAsP; in the field of nitrides: GaN, AlGaN, InGaN; and for II-VI semiconductors: ZnTe, ZnSe, ZnO. The knowledge of composition details of these materials, of presence of impurities and/or doping agents in layers and interfaces is necessary for a good understanding of devices properties. The ionic probe gives a quantitative, fast and complete answer. It produces compositions profiles of identified elements as a function of depth, but can also provide mass spectra that enable the discovery of unidentified elements in the material. The ionic imagery can then give the spatial distribution of these elements. Probion thanks you for being so kind as to express remarks or criticism which will enable us to improve and complete this tutorial.
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